Printed stacked micro-devices

ABSTRACT

A stacked electronic component comprises a stack of three or more print layers. Each print layer has an area less than any print layers beneath the print layer in the stack. Each print layer comprises a dielectric layer and a functional layer disposed on the dielectric layer. The functional layer comprises an exposed conductive portion that is not covered with a dielectric layer of any of the print layers and each exposed conductive portion is nonoverlapping with any other exposed conductive portion. A patterned electrode layer is coated on at least a portion of the stack and defines one or more electrodes. Each electrode of the one or more electrodes in electrical contact with an exclusive subset of the exposed conductive portions. The functional layers can be passive conductors forming capacitors, resistors, inductors, or antennas, or active layers forming electronic circuits.

CROSS REFERENCE TO RELATED APPLICATIONS

Reference is made to U.S. Pat. No. 10,050,351, entitled MultilayerPrinted Capacitors, filed Jun. 18, 2015 by Bower et al and to U.S.Patent Application Publication No. 2018/0042110, entitled Printable 3DElectronic Structure, filed Aug. 3, 2017 by Cok, the disclosures ofwhich are incorporated herein by reference in their entirety.

TECHNICAL FIELD

The present disclosure relates generally to structures and methods formaking stacked electronic components using micro-transfer printing.

BACKGROUND

Electronic circuits typically use a combination of passive and activeelectronic components. Passive electronic components include capacitors,resistors, and inductors (e.g., coils) that affect the flow of current,store electrical charge, or form electromagnetic fields. Activeelectronic components include transistors and diodes incorporatingsemiconductor materials that can switch or amplify electronic current.For electronic systems comprising printed circuit boards, integratedcircuits and stacked electronic components can be assembled on theprinted circuit boards using methods such as pick-and-place. However,such techniques for assembling passive components are limited in theform factors that can be assembled due to limitations on the size ofcomponents that can be manipulated and placement accuracy.

Micro-electronic systems can be highly integrated and include activemicro-components with sizes of only a few nanometers integrated in alayer of a semiconductor substrate, for example as are found inintegrated circuits useful in computers and portable electronic devicessuch as cellular telephones. Although the size of the active componentscan be very small, comparably sized passive components have much smallerfunctional parameters. For example, smaller resistors have a smallerresistance and smaller capacitors have a smaller capacitance. However,in many electronic circuits, even if the active components are reducedin size, the desired resistance or capacitance of passive components inthe electronic circuits remains the same. In consequence, the passivecomponents can be relatively large compared to the active components,inhibiting a desired reduction in size of the electronic circuits andassociated micro-electronic systems. There is a need, therefore, forsmaller passive electronic components with larger functional parameterssuitable for integration into micro-electronic devices such asintegrated circuits. There is also a need for active electronic devicesmade in smaller structures.

To increase density in electronic systems further, some electronicsystems use stacked integrated circuits to reduce power, improveswitching speed, and increase density, for example as taught in U.S.Pat. No. 6,551,857. However, these structures require packagedintegrated circuits and thermal diffusion bond layers, increasing thesize and interconnection complexity of the structure. Other methods usestacked die layers with through interconnects, for example as discussedin U.S. Pat. No. 9,000,577, but construction of throughinterconnections, for example with through silicon vias, is difficultand expensive. Other methods employ interface wafers with throughsilicon vias to interconnect bonded active-circuitry wafers (U.S. Pat.No. 8,129,256) or integrated circuits (U.S. Pat. No. 8,546,900) butthese are limited in the number of layers that can be interconnected.

Stacked capacitor structures are discussed in U.S. Pat. No. 5,864,177,but these are each interconnected with bond wires, use internal vias toconnect the plates in each capacitor, and the layers are constructedusing expensive photolithography. U.S. Patent Publication No.2007/0290321 discloses chip and wire and flip-chip-compatible die stackcapacitors (“stack caps”) that comprise separately fabricatedmulti-layer sections that are bonded together. Each stack cap is wirebonded to a host substrate and comprises conductive adhesive layersadhering two successively smaller single-layer capacitors (SLCs) eachhaving a dielectric layer with metalized top and bottom surfaces. Themetalized top surfaces are wire bonded to the host substrate, providingtwo power connections and a ground connection. However, wire bonding isa slow and relatively expensive connection process unsuited to massproduction in large volumes, the number of functional layers in eachstack cap is limited as is the number of stack caps, thereby limitingthe capacitance of the die stack capacitor, and conductive adhesives canbe less conductive than desired, reducing the performance and functionalparameters of the die stack capacitor.

A method for transferring active micro-components from one substrate toanother is described in AMOLED Displays using Transfer-PrintedIntegrated Circuits published in the Proceedings of the 2009 Society forInformation Display International Symposium Jun. 2-5, 2009, in SanAntonio Tex., US, vol. 40, Book 2, ISSN 0009-0966X, paper 63.2 p. 947.In this approach, small integrated circuits are formed over a buriedoxide layer on the process side of a crystalline wafer. The smallintegrated circuits, or chiplets, are released from the wafer by etchingthe buried oxide layer formed beneath the circuits. A PDMS stamp ispressed against the wafer and the process side of the chiplets isadhered to the stamp. The chiplets are pressed against a destinationsubstrate or backplane coated with an adhesive and thereby adhered tothe destination substrate. The adhesive is subsequently cured. Inanother example, U.S. Pat. No. 8,722,458 entitled Optical SystemsFabricated by Printing-Based Assembly teaches transferringlight-emitting, light-sensing, or light-collecting semiconductorelements from a wafer substrate to a destination substrate or backplane.

U.S. Pat. No. 10,050,351 discloses a micro-capacitor comprising stackedsubstrates assembled by micro-transfer printing. In embodiments of thisdesign, multiple substrates of identical size are stacked in an offsetconfiguration to expose electrical connections to each substrate in thestack. Each substrate can comprise an array of vertical capacitors in asubstrate with a common connection. Wire bonds connect the plates toform a three-dimensional capacitor. However, wire bonding can be arelatively slow and cumbersome method for connecting electronic devices.

U.S. Patent Publication No. 2018/0042110 discloses a stack ofmicro-devices that are electrically connected with connection posts. Themicro-devices can be, among other things, capacitors but themicro-devices are relatively large compared to the capacitor itself andrequire repeated photolithographic processing steps.

There is a need, therefore, for structures and methods that enableelectronic micro-components with increased functional parameters andreduced size that are suitable for incorporation into micro-electronicsystems.

SUMMARY

The present disclosure provides, among other embodiments, structures,materials, and methods for a stacked electronic component comprising astack of three or more print layers. Each print layer in the stack ofthree or more print layers has an area less than any of the print layersthat are beneath the print layer in the stack. Each of the print layerscomprises a dielectric layer and a functional layer disposed on thedielectric layer. The functional layer comprises an exposed conductiveportion that is not covered with a dielectric layer of any of the printlayers and the exposed conductive portion of each of the print layers isnonoverlapping with the exposed conductive portion of any other of theprint layers. A patterned electrode layer is coated on at least aportion of the stack and defines one or more electrodes. Each electrodeof the one or more electrodes is in electrical contact with an exclusivesubset of the exposed conductive portions of each of an exclusive subsetof the print layers. Multiple electrical connections to a common exposedconductive portion of a print layer are a common electrode. According tosome embodiments, the stacked electronic component is a passiveelectronic component. According to some embodiments, the stackedelectronic component is an active electronic component. In someconfigurations, the functional layer is exclusively an electricalconductor, exclusively a resistive electrical conductor, an epitaxiallayer, or an active circuit. The stacked electronic component can be amulti-layer active circuit, a capacitor, a resistor, an inductor, or anantenna.

According to some embodiments, each and every print layer of each of thestack of three or more print layers is electrically connectedexclusively by the patterned electrode layer. According to someembodiments, less than all of the print layers of the stack of three ormore print layers is electrically connected by the patterned electrodelayer. The print layer of each of the stack of three or more printlayers can be, but is not necessarily, adhered to an adjacent printlayer with a layer of adhesive. The dielectric layer can be the layer ofadhesive.

In some configurations, the dielectric layer is a bottom dielectriclayer and each print layer of the stack of three or more print layerscomprises a top dielectric layer disposed on the functional layer on aside (surface) of the functional layer opposite the bottom dielectriclayer. The top dielectric layer can cover the functional layer exceptfor the exposed conductive portion. The top dielectric layer can be aninorganic dielectric or a layer of adhesive that adheres adjacent printlayers of the stack of three or more print layers together.

According to some embodiments, the patterned electrode layer definesonly two electrodes. According to some embodiments, the one or moreelectrodes in the patterned electrode layer are disposed in a commonlayer. According to some embodiments, the one or more electrodeselectrically connect fewer than all of the exposed conductive portions.

According to some embodiments, the exposed conductive portions of atleast two print layers of the stack of three or more print layers areelectrically connected by one or more functional-layer connectors (e.g.,functional-layer electrical connections) that are physically andspatially separate from the one or more electrodes and electricallyseparate from the one or more electrodes except through the functionallayers (e.g., are not directly connected). The one or morefunctional-layer connectors can be disposed in a common layer, forexample in a common coated and patterned metal layer disposed andpatterned in common steps. The one or more functional-layer connectorscan be disposed in a common layer with the one or more electrodes, forexample in a common coated and patterned metal layer disposed andpatterned in common steps. The one or more functional-layer connectorscan electrically connect the functional layers in series or in parallel.The functional-layer connectors can electrically connect the exposedconductive portions of adjacent print layers of the stack of three ormore print layers.

According to some embodiments, the print layers of the stack of three ormore print layers are shaped as a polygon, for example within the limitsof a manufacturing process. In some embodiments, all of the exposedconductive portions of the print layers are disposed on opposing sides(opposing edges) of the polygon. In some embodiments, each of theexposed conductive portions of the print layers is disposed on threesides (three edges) of the polygon. In some embodiments, each of theexposed conductive portions of the print layers is disposed on one side(one edge) of the polygon. In some embodiments, all of the exposedconductive portions are disposed on one side (one edge) of the polygon.According to some embodiments, the print layers of the stack of three ormore print layers are substantially rectangular or the dielectric layerhas a rectangular shape with an extended tab and the exposed conductiveportion is disposed on the tab. In some embodiments, none of the exposedconductive portions electrically connected to a first electrode of theone or more electrodes are disposed spatially between the exposedconductive portions electrically connected to a second electrode of theone or more electrodes different from the first electrode in a directionorthogonal to the stack. In some embodiments, some of the exposedconductive portions electrically connected to a first electrode of theone or more electrodes are disposed spatially between the exposedconductive portions electrically connected to a second electrode of theone or more electrodes different from the first electrode in a directionorthogonal to the stack.

Each functional layer in the stack can be a passive electrical conductorthat is a plate (e.g., a coated surface of a polygon filled with anelectrical conductor), a serpentine conductor (e.g., a wire), or aconductor within and close to at least most of a perimeter of a polygon(e.g., a wire extending around most of, and near to the edge of, thepolygon, for example closer to the perimeter than a center of thepolygon). Each functional layer can be an epitaxial layer, for example aphotolithographically processed epitaxial layer comprising electricallyconnected transistors or diodes, or both transistor and diodes. Eachfunctional layer can be semiconductor substrate, for example aphotolithographically processed semiconductor substrate comprisingelectrically connected transistors or diodes, or both.

In some embodiments, a stacked electronic component of the presentdisclosure comprises an insulating layer disposed over the stack ofthree or more print layers and vias formed in the insulating layer. Oneor more electrodes can be electrically connected to the exposedconductive portions through the vias. In some embodiments, a stackedelectronic component of the present disclosure is encapsulated, forexample by an organic or inorganic dielectric. In some embodiments, astacked electronic component of the present disclosure is planarized,for example by an organic or inorganic dielectric.

According to some embodiments, a stacked electronic component comprisesan alignment structure and the print layers of the stack of three ormore print layers are one or more of adjacent to, aligned by, and incontact with the alignment structure. The alignment structure can alignthe stack and the print layers in one dimension or in two dimensions.

In some embodiments, the functional layer of one or more print layers ofthe stack of three or more print layers is a vertical capacitor layer.

In some embodiments, each print layer of the stack of three or moreprint layers comprises a broken (e.g., fractured) or separated tether.In some embodiments, the functional layer of one or more print layers ofthe stack of three or more print layers comprises a broken (e.g.,fractured) or separated tether.

According to some embodiments of the present disclosure, a stackedelectronic component comprises a component substrate comprising acomponent print layer, the component print layer comprising a componentdielectric layer and a component functional layer disposed on thecomponent dielectric layer. Print layers are disposed on the componentsubstrate. The component functional layer comprises a componentsubstrate exposed conductive portion that is not covered with adielectric layer of any of the print layers disposed on the componentsubstrate and an electrode of the one or more electrodes is inelectrical contact with the component substrate exposed conductiveportion. The component print layer can be a print layer in the stack ofprint layers.

According to some embodiments, a stacked electronic component is amicro-component. An area of the stacked electronic component can be nogreater than 40,000 μm², a thickness of each print layer can be nogreater than one micron, two microns, five microns, or 10 microns, and athickness of the stack can no greater than 5 microns, 10 microns, 20microns, 30 microns, 50 microns, or 100 microns.

The patterned electrode layer can cover no less than 5% of an area ofthe stacked electronic component, no less than 5% of an area of thestacked electronic component, no less than 10% of an area of the stackedelectronic component, no less than 25% of an area of the stackedelectronic component, no less than 50% of an area of the stackedelectronic component, no less than 75% of an area of the stackedelectronic component, no less than 85% of an area of the stackedelectronic component. The area of the stacked electronic component canbe the area in a horizontal direction orthogonal to a vertical directionof the stack of print layers.

According to embodiments of the present disclosure, a method of making astacked electronic component comprises providing one or more print-layersource wafers comprising print layers, providing a component sourcesubstrate, transfer printing a first print layer from a print-layersource wafer of the one or more print-layer source wafers onto thecomponent source substrate, transfer printing a second print layer froma print-layer source wafer of the one or more print-layer source wafersonto the first print layer, transfer printing a third print layer from aprint-layer source wafer of the one or more print-layer source wafersonto the second print layer thereby increasing the number of printlayers in the stack of print layers, coating the stack with an electrodelayer, and patterning the electrode layer to define one or moreelectrodes. Each electrode of the one or more electrodes can be inelectrical contact with each exposed conductive portion of an exclusivesubset of the print layers in the stack. Each print layer comprises adielectric layer and a functional layer disposed on the dielectriclayer. Each functional layer can comprise an exposed conductive portionthat is not covered with a dielectric layer of any of the print layers,the second print layer has a smaller area than the first print layer andthe third print layer has a smaller area than the second print layer,and each exposed conductive portion of the print layers in the stack isnonoverlapping with any other exposed conductive portion.

Some embodiments comprise successively transfer printing print layershaving successively smaller areas from a print-layer source wafer of theone or more print-layer source wafers onto the stack to increase thenumber of print layers in the stack. Each functional layer of each printlayer comprises an exposed conductive portion that is not covered with adielectric layer of any of the print layers. The one or more print-layersource wafers can be a single, common print-layer source wafer, aplurality of substantially identical print-layer source wafers, or aplurality of print-layer source wafers, at least some of which aredifferent from each other. Some methods comprise rotating a print layerwith respect to another different print layer while transfer printingthe print layer onto or over the other print layer.

The component substrate can be disposed on or in a component sourcewafer and methods of the present disclosure can comprise transferprinting the component to a target substrate. In some methods, thecomponent substrate is a target substrate. Some methods comprise coatingthe stack with an insulating layer and forming vias in the insulatinglayer to expose the exposed conductive portions.

Patterning the electrode layer can comprise forming one or morefunctional-layer connectors that each electrically connect the exposedconductive portions of at least two print layers in the stack and arephysically and spatially separate from the one or more electrodes sothat the one or more electrodes electrically connect fewer than all ofthe exposed conductive portions in the stack.

According to some embodiments of the present disclosure, an activeelectronic component comprises a stack of three or more print layers.Each print layer in the stack of three or more print layers has an arealess than any of the print layers that are beneath the print layer inthe stack. Each print layer in the stack of three or more print layerscomprises a dielectric layer and an epitaxial layer disposed on or inthe dielectric layer. The epitaxial layer can comprise an exposedconductive portion that is not covered with a dielectric layer of any ofthe print layers of the stack of three or more print layers and theexposed conductive portion of each of the print layers is nonoverlappingwith the exposed conductive portion of any other of the print layers. Apatterned electrode layer can be coated on at least a portion of thestack, the patterned electrode layer defining one or more electrodes,each electrode of the one or more electrodes in electrical contact withthe exposed conductive portion of each of an exclusive subset of theprint layers. The dielectric layer can be a layer of adhesive. Theepitaxial layer can be a semiconductor substrate, or a layer of epitaxydisposed on (e.g., grown on) the dielectric layer. In some embodiments,the print layers in the stack of three or more print layers are activeprint layers.

Some active-print-layer embodiments of the present disclosure can alsocomprise one or more passive print layers that each comprise adielectric layer and a functional layer disposed on the dielectriclayer. The functional layer comprises an electrical conductor, forexample a patterned electrical conductor, and an exposed conductiveportion that is not covered with a dielectric layer of any of the printlayers in the stack of three or more print layers. Each exposedconductive portion is nonoverlapping with any other exposed conductiveportion or any active print layer or passive print layer in the stack ofthree or more print layers.

According to some embodiments, a passive electronic component comprisesa stack of three or more print layers, each print layer in the stackhaving an area less than any of the print layers that are beneath theprint layer in the stack of three or more print layers. Each of theprint layers comprises a dielectric layer and a conductive layerdisposed on or in the dielectric layer. The conductive layer can be assubstantially conductive as the materials and processing methods for theconductive layer allow or can be a substantially resistive conductorwith a desired resistance defined by the materials and processingmethods for the conductive layer. The conductive layer comprises anexposed conductive portion that is not covered with a dielectric layerof any of the print layers in the stack of three or more print layersand the exposed conductive portion of each of the print layers isnonoverlapping with the exposed conductive portion of any other of theprint layers. A patterned electrode layer is coated on at least aportion of the stack, the patterned electrode layer defines one or moreelectrodes, and each electrode of the one or more electrodes is inelectrical contact with the exposed conductive portions of each of anexclusive subset of the print layers.

The present invention provides, inter alia, structures and methods thatenable the construction of passive or active electronic micro-componentswith a reduced footprint over a substrate and with increased functionalparameters or circuit complexity and size. In certain embodiments, theassembly and electrical interconnection process for the passiveelectronic micro-components is simple and inexpensive requiring fewerprocess steps than known alternative methods and provides a robust,three-dimensional electronic structure that is expandable in a varietyof configurations and circuits.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other objects, aspects, features, and advantages ofthe present disclosure will become more apparent and better understoodby referring to the following description taken in conjunction with theaccompanying drawings, in which:

FIGS. 1A-1D are plan views and cross sections of different-area printlayers of a micro-assembled electronic component according toillustrative embodiments of the present disclosure;

FIG. 1E is a plan view and FIG. 1F is a corresponding cross section ofthe print layers of FIGS. 1A-1D micro-assembled on a component substrateaccording to illustrative embodiments of the present disclosure;

FIG. 1G is a cross section of the structure of FIGS. 1E and 1F coatedwith an electrode layer according to illustrative embodiments of thepresent disclosure;

FIG. 1H is a cross section of the structure of FIG. 1G with theelectrode layer patterned to define electrodes according to illustrativeembodiments of the present disclosure;

FIG. 1I is a cut-away plan view corresponding of the cross section ofFIG. 1H according to illustrative embodiments of the present disclosure;

FIGS. 2A-2D are plan views and cross sections of different-area printlayers of a micro-assembled electronic component according toillustrative embodiments of the present disclosure;

FIG. 2E is a cut-away plan view of the print layers of FIGS. 2A-2Dmicro-assembled on a component substrate with patterned electrodesaccording to illustrative embodiments of the present disclosure;

FIGS. 3A-3D are plan views and cross sections of different-area printlayers of a micro-assembled electronic component according toillustrative embodiments of the present disclosure;

FIG. 3E is a plan view and FIG. 3F is a corresponding cross section ofthe print layers of FIGS. 3A-3D micro-assembled on a component substrateaccording to illustrative embodiments of the present disclosure;

FIG. 3G is a cross section of the structure of FIGS. 3E and 3F coatedwith a dielectric according to illustrative embodiments of the presentdisclosure;

FIG. 3H is a cross section of the structure of FIG. 3G with thedielectric patterned to form vias according to illustrative embodimentsof the present disclosure;

FIG. 3I is a cross section of the structure of FIG. 3H coated with anelectrode layer according to illustrative embodiments of the presentdisclosure;

FIG. 3J is a cross section and FIG. 3K is a corresponding cut-away planview of the structure of FIG. 3I with the electrode layer patterned toform electrodes according to illustrative embodiments of the presentdisclosure;

FIGS. 4A-4D are plan views and cross sections of different print layersof a micro-assembled electronic component according to illustrativeembodiments of the present disclosure;

FIG. 4E is a cross section and FIG. 4F is a corresponding cut-away planview of the print layers of FIGS. 4A-4D micro-assembled on a componentsubstrate with patterned electrodes according to illustrativeembodiments of the present disclosure;

FIGS. 5A-5D are plan views and cross sections of different print layersof an electronic component according to illustrative embodiments of thepresent disclosure;

FIG. 5E is a cross section and FIG. 5F is a corresponding cut-away planview of the print layers of FIGS. 5A-5D micro-assembled with analignment structure on a component substrate and with patternedelectrodes according to illustrative embodiments of the presentdisclosure;

FIG. 6 is a cut-away plan view of a micro-assembled electronic componentwith patterned electrodes and an alignment structure micro-assembled ona component substrate according to illustrative embodiments of thepresent disclosure;

FIG. 7 is a cut-away plan view of a micro-assembled electronic componentwith patterned electrodes and a one-dimensional alignment structuremicro-assembled on a component substrate according to illustrativeembodiments of the present disclosure;

FIG. 8 is a cut-away plan view of a micro-assembled electronic componentwith patterned electrodes and a two-dimensional alignment structuremicro-assembled on a component substrate according to illustrativeembodiments of the present disclosure;

FIG. 9A is a cross section and FIG. 9B is a plan view of a printablevertical capacitor print layer according to illustrative embodiments ofthe present disclosure;

FIG. 9C is a cut-away plan view of a micro-assembled stacked capacitorwith vertical-capacitor print layers corresponding to FIGS. 9A and 9Band patterned electrodes micro-assembled on a component substrateaccording to illustrative embodiments of the present disclosure;

FIGS. 10A-10D are plan views and cross sections of different-area printlayers of a resistor according to illustrative embodiments of thepresent disclosure;

FIG. 10E is a cut-away plan view of a micro-assembled stacked resistorwith layers corresponding to FIGS. 10A-10D and patterned electrodesmicro-assembled on a component substrate according to illustrativeembodiments of the present disclosure;

FIGS. 11A-11D are plan views and cross sections of different-area printlayers of a micro-assembled resistor according to illustrativeembodiments of the present disclosure;

FIG. 11E is a cut-away plan view of a micro-assembled stacked resistorwith print layers corresponding to FIGS. 11A-11D with patternedelectrodes micro-assembled on a component substrate according toillustrative embodiments of the present disclosure;

FIGS. 12A-12D are plan views and cross sections of different-area printlayers of a micro-assembled inductor or a micro-assembled antennaaccording to illustrative embodiments of the present disclosure;

FIG. 12E is a cut-away plan view of a micro-assembled stacked inductorwith print layers corresponding to FIGS. 12A-12D with patternedelectrodes micro-assembled on a component substrate according toillustrative embodiments of the present disclosure;

FIG. 12F is a plan view of a micro-assembled stacked inductor withlayers corresponding to FIGS. 12A-12E with patterned electrodesmicro-assembled on a component substrate according to illustrativeembodiments of the present disclosure;

FIG. 12G is a plan view of a micro-assembled stacked antenna with layerscorresponding to FIGS. 12A-12D with a patterned electrodemicro-assembled on a component substrate according to illustrativeembodiments of the present disclosure;

FIGS. 13-14 are cross sections of stacked electronic componentscomprising adhesive layers according to illustrative embodiments of thepresent disclosure;

FIG. 15 is a cross section of a stacked electronic component on a targetsubstrate according to illustrative embodiments of the presentdisclosure;

FIG. 16A is a cross section of a stacked electronic component comprisinga component substrate and a component functional layer on a dielectriclayer with layers of adhesive according to illustrative embodiments ofthe present disclosure;

FIG. 16B is a cross section of a stacked electronic component comprisinga component substrate and a component functional layer with electrodesaccording to illustrative embodiments of the present disclosure;

FIG. 16C is a cross section of a stacked electronic component comprisinga component substrate and a component functional layer on a bottomadhesive dielectric layer with a top dielectric layer according toillustrative embodiments of the present disclosure;

FIG. 16D is a cross section of a stacked electronic component comprisinga component substrate and a component functional layer on an adhesivedielectric layer according to illustrative embodiments of the presentdisclosure;

FIGS. 17 and 18 are flow diagrams illustrating methods of the presentdisclosure;

FIG. 19 is a cross section of different-area transfer-printable printedlayers in a print-layer source wafer according to illustrativeembodiments of the present disclosure;

FIG. 20 is a cross section of a transfer-printable stacked electroniccomponent disposed on a component substrate in a component source waferaccording to illustrative embodiments of the present disclosure;

FIG. 21 is a plan view of different-area print layers with tabs of amicro-assembled component according to illustrative embodiments of thepresent disclosure;

FIG. 22 is a plan view and cross section of a print layer having anepitaxial or semiconductor layer and active circuit according toillustrative embodiments of the present disclosure; and

FIG. 23 is a cross section of a stacked electronic component disposed onand electrically connected to an active circuit in or on a target orcomponent substrate according to illustrative embodiments of the presentdisclosure.

The features and advantages of the present disclosure will become moreapparent from the detailed description set forth below when taken inconjunction with the drawings, in which like reference charactersidentify corresponding elements throughout. In the drawings, likereference numbers generally indicate identical, functionally similar,and/or structurally similar elements. The Figures are not drawn to scalesince the variation in size of various elements in the Figures is toogreat to permit depiction to scale.

DETAILED DESCRIPTION OF CERTAIN EMBODIMENTS

The present disclosure provides, inter alia, structures and methods forstacked electronic components. The stacked electronic components can beactive electronic components or passive electronic components. Thestacked electronic components comprise three or more print layersdisposed in a stack over a substrate, such as a component or a targetsubstrate. The print layers are mutually non-native to each other, e.g.,and any destination or target substrate but at least some print layerscan be native to a common source wafer. Reference herein to “printlayers” refers to, in some embodiments, three or more print layers. Eachprint layer comprises a dielectric layer (e.g., substrate) comprisingdielectric material and a functional layer comprising electricallyfunctional material. Each print layer in the stack has a successivelysmaller area than the previous print layer in the stack. The functionalmaterials in each print layer are electrically connected together with apatterned coating of electrically conductive material, such as a metal,to form electrodes electrically connecting the functional layers toexternal devices. The functional materials in some print layers can beelectrically connected together with functional-layer connectionsinternal to the stack. The functional materials in the print layers cancomprise, without limitation, passive electronic materials such aselectrical conductors (e.g., planar, serpentine, or three dimensionallystructured conductors, for example surrounded by dielectric that forms aplanarizing layer) or active materials comprising epitaxial layers orsemiconductor substrates comprising active circuits with transistors ordiodes. The stacked electronic components can be passive electronicdevices such as capacitors, resistors, inductors, and antennas or activeelectronic devices such as multi-layer integrated circuits.

The stacked electronic components can be micro-assembled massively inparallel using transfer printing (e.g., micro-transfer printing) withexcellent efficiency and at reduced cost in a simple, efficient,extensible, flexible, and cost-effective way. The stacked electroniccomponents can be constructed in common processing steps with integratedcircuits, can be very small, and can be integrated directly into or onintegrated circuit dies or in unpackaged circuits on a micro-substratesuch as a component substrate. Stacked passive electronic components ofthe present disclosure can provide, in a small, dense structure,functional parameters (e.g., capacitance, resistance, inductance) muchgreater than conventional thin-film planar structures found inintegrated circuits.

According to some embodiments of the present disclosure and withreference to FIGS. 1A-1I, a stacked electronic component 90 (e.g., amicro-assembled integrated circuit, a micro-assembled antenna 96, amicro-assembled capacitor 97, a micro-assembled resistor 98, amicro-assembled inductor 99) comprises a stack 80 of print layers 20. Asshown in FIGS. 1A-1D, each print layer 20 in stack 80 has an area lessthan any other print layers 20 beneath print layer 20 in stack 80, sothat stack 80 can have a pyramidal appearance with successively smallerlayers toward the top of the pyramid, as shown in FIG. 1F. Stack 80 canextend in a vertical direction away from an underlying substrate, suchas a component substrate 10, so that an area of a print layer 20 is overa horizontal surface of component substrate 10 orthogonal to verticaldirection D of stack 80.

Each print layer 20 comprises a dielectric layer 22 and a functionallayer 24 disposed on dielectric layer 22. Dielectric layer 22 can be adielectric substrate on which functional layer 24 is disposed (e.g., bymicro-transfer printing so that functional layer 24 is non-native todielectric layer 22) or on which functional layer 24 is formed, so thatfunctional layer 24 is native to dielectric layer 22. Functional layer24 can be a passive electrical conductor patterned to provide a specificfunction or an epitaxial layer or semiconductor substrate that can beprocessed to form an electronic circuit comprising active electronicdevices, e.g., as found in integrated circuits.

Functional layer 24 comprises an exposed conductive portion 25 (e.g.,exposed conductive portions 25A and 25B, collectively exposed conductiveportions 25) that is not covered with a dielectric layer 22 of any ofprint layers 20. Each exposed conductive portion 25 can be a passiveelectrical conductor such as a contact pad electrically connected tofunctional layer 24 and is spatially separated (e.g., by a spatialseparation S) from any other exposed conductive portion 25 in adirection orthogonal to stack 80 (e.g., a horizontal direction H), asshown in FIG. 1E. Stack 80 can be disposed on a component substrate 10and extend from component substrate 10 in a vertical direction D, e.g.,a vertical direction D orthogonal to horizontal directions H of asurface of component substrate 10. Thus, a print layer 20 beneathanother print layer 20 is vertically between the other print layer 20and component substrate 10. Likewise, a print layer 20 vertically aboveanother print layer 20 is on or over a side (surface) of the other printlayer 20 opposite component substrate 10. Moreover, print layers 20 canbe substantially planar (e.g., having a length and width in horizontaldirection H much greater than a thickness in a vertical direction D) andextend in horizontal direction H orthogonal to vertical stack directionD. Spatial separation S can be in a horizontal direction H orthogonal tostack direction D. In some embodiments, spatial separation S is zero,that is two exposed conductive portions 25 can abut each other, butcannot overlap (e.g., are nonoverlapping) so that a vertical lineextending from component substrate 10 in direction D cannot pass throughtwo exposed conductive portions 25.

As shown in FIG. 1G, an electrode layer 30 is coated on at least aportion of stack 80 and then patterned to define one or more electrodes32 (e.g., electrodes 32A, 32B, collectively electrodes 32), as shown inFIGS. 1H and 1I. Each electrode 32 is in electrical contact with anexclusive subset of exposed conductive portions 25. Multiple electricalconnections to a common exposed conductive portion 25 of a print layer20 are a common electrode 32. Coating and patterning electrodes 32 overstack 80 and in electrical contact with exposed conductive portions 25provides a simple, efficiently constructed, and highly conductiveconnection to the multiple print layers 20 in stack 80. In someembodiments, electrodes 32 are coated over print layer 20 surfaces(e.g., at least partially on dielectric layer 22, including a verticaledge of dielectric layer 22, and at least partially on exposedconductive portions 25) and, optionally, at least partially on a topdielectric layer 26 disposed on or over at least a portion of functionallayer 24. In some embodiments, electrodes 32 and, more generally,stacked electronic components 90 do not comprise bond wires, which arefragile and prone to failure unless packaged (which greatly increasesthe component size).

FIGS. 1A, 1B, 1C, and 1D illustrate four print layers 20 withsuccessively smaller areas in plan view and cross section. In someembodiments, each print layer 20 comprises a dielectric layer 22 (forexample an oxide or nitride layer such as silicon dioxide or siliconnitride or, in some embodiments, an organic resin, such as a curedpolymer, e.g., epoxy or photoresist) and a functional layer 24 (forexample a low-resistance electrical conductor such as a metal such asaluminum, copper, silver, or gold, a resistive electrical conductor suchas polysilicon, or an epitaxial layer deposited by evaporation, chemicalvapor deposition, or sputtering or a semiconductor substrate disposed bytransfer printing, (e.g., micro-transfer printing) disposed andpatterned on dielectric layer 22, for example using photolithographicmethods and materials. Print layers 20 are disposed on a substrate, forexample component substrate 10, in an ordered stack 80 so that eachprint layer 20 in stack 80 has an area smaller than all other printlayers 20 beneath print layer 20 (e.g., closer to component substrate10). An area of a print layer 20 can be the area of print layer 20 overcomponent substrate 10 (e.g., a footprint of print layer 20) equal tothe product of an X dimension and a Y dimension of print layer 20 (shownin FIG. 1E for print layer 20 of FIG. 1A). A direction D of stack 80(shown in FIG. 1F) is a vertical upward (up) direction away fromcomponent substrate 10 in the direction of decreasing areas of printlayers 20 in stack 80. A top print layer 20 is the print layer 20farthest from component substrate 10 and a bottom print layer 20 is theprint layer 20 closest to component substrate 10. A downward (down)direction is a vertical direction opposite D and in the direction ofprint layers 20 with increasing areas from top print layer 20 to bottomprint layer 20. Those knowledgeable in the art will understand that upand down, top and bottom, over and under, and above and beneath arerelative references and can be exchanged, for example by turning stackedelectronic component 90 over. Adjacent print layers 20 are print layers20 for which no other print layer 20 is between the adjacent printlayers 20 in direction D or opposite direction D. Bottom print layer 20is adjacent to component substrate 10.

In embodiments according to FIGS. 1A-1I, an additional dielectric layer(top dielectric layer 26, for example comprising patterned oxides ornitrides such as silicon dioxide or silicon nitride or organic materialssuch as adhesive or epoxies) is disposed over functional layer 24 ineach print layer 20. In such embodiments, dielectric layer 22 can be abottom dielectric layer 22. Top dielectric layer 26 can have a top area(footprint) over component substrate 10 and bottom dielectric layer 22can have a bottom area (footprint) over component substrate 10. In eachprint layer 20, the bottom area can be greater than an area offunctional layer 24 and the area of functional layer 24 can be greaterthan the top area so that functional layer 24 extends beyond topdielectric layer 26 over bottom dielectric layer 22 to form exposedconductive portions 25A, 25B. Top dielectric layer 26 can cover all offunctional layer 24 except exposed conductive portions 25. According tosome embodiments, each functional layer 24 is exclusively directlyadjacent to a dielectric layer 22 in different print layers 20 or in thesame print layer 20 (e.g., between bottom dielectric layer 22 and topdielectric layer 26). Exposed conductive portions 25A can beelectrically connected to a common electrode 32A and exposed conductiveportions 25B can be electrically connected to a common electrode 32B.However, embodiments of the present disclosure are not limited to twoelectrodes 30 and two exclusive subsets of exposed conductive portions25. In some embodiments, three or more of each are provided. Top andbottom dielectric layers 26, 22 and functional layers 24 can beconstructed using photolithographic methods and materials, for exampledeposition by sputtering or evaporation and patterning by photoresistdeposition, masking, and etching. In embodiments in which functionallayer 24 is a semiconductor substrate, e.g., is an unpackagedmicro-chip, the semiconductor substrate can be disposed on dielectriclayer 22 by micro-transfer printing and can comprise a broken (e.g.,fractured) or separated tether (not shown in the Figures).

As shown in FIGS. 1E and 1F, print layers 20 are successively disposedon component substrate 10, for example using transfer printing, such asmicro-transfer printing, in order of area size, with the largest-areaprint layer 20 disposed first (e.g., print layer 20 as shown in FIG. 1A)and the smallest-area print layer 20 disposed last (e.g., print layer 20as shown in FIG. 1D) to form stack 80 of print layers 20. Eachsuccessive print layer 20 is disposed so that exposed conductive portion25A or 25B on each print layer 20 remains exposed and extends beyonddielectric layers 22 of print layers 20 above it in stack 80.

For clarity, the plan view Figures of the present disclosure illustrateelectrodes 32 (e.g., electrodes 32A and 32B) with transparent rectanglesoutlined with solid lines and top dielectric layers 26 with transparentrectangles outlined with dashed lines. Bottom dielectric layers 22 areillustrated with white rectangles outlined with solid lines andfunctional layers 24 are illustrated with filled rectangles outlinedwith solid lines. Exposed conductive portions 25 are electricallyconductive portions of functional layers 24, such as a contact pad. Insome embodiments, print layers 20 are transfer printable print layers 20with print-layer tethers 28. For clarity of illustration, print-layertethers 28 are not shown in the plan views and cross sections of printlayer 20 stacks 80 (e.g., FIGS. 1E, 1I and FIGS. 1F-1H, respectively)but can be shown in the plan views of individual print layers 20 (e.g.,FIGS. 1A-1D).

Print layers 20 can be micro-transfer printed from a print-layer sourcewafer 70 (e.g., as shown in FIG. 19) comprising sacrificial portions 72spatially and laterally separated by anchors 74 with a print layer 20disposed completely, directly, and exclusively over each sacrificialportion 72 with a print-layer tether 28 physically connecting each printlayer 20 to an anchor 74. After sacrificial portion 72 is etched to forma gap between print layer 20 and print-layer source wafer 70, a stamp,e.g., a visco-elastic stamp with stamp posts, contacts each print layer20 to adhere print layer 20 to the stamp post, removes print layers 20from print-layer source wafer 70 thereby fracturing print-layer tethers28, and disposes print layer 20 on stack 80 or component substrate 10.

Once print layers 20 are disposed in stack 80, for example on or overcomponent substrate 10, electrode layer 30 can be disposed (e.g., coatedby evaporation, sputtering, or spray coating), for example in anunpatterned blanket coating as shown in FIG. 1G and then patterned usingphotolithographic methods and materials. Electrode layer 30 can compriseany suitable electrical conductor, for example a metal such as aluminum,silver, gold, titanium, tungsten, copper, a metal alloy, a conductiveoxide such as indium tin oxide, or a conductive polymer such aspolythiophene. Electrode layer 30 can be, but is not necessarily,transparent or reflective. After deposition, electrode layer 30 ispatterned, for example using photolithography, to form electrodes 32(e.g., electrodes 32A, 32B) as shown in FIGS. 1H and 1I, to completemicro-assembled and stacked electronic component 90. Thus, all ofelectrodes 32 are disposed, formed, and patterned in a common layer withcommon processing steps, reducing costs and improving manufacturingthroughput.

Electrodes 32 can be any coated and patterned electrical conductor, forexample electrically conductive metal layers, can be metal oxideconductors, can be organic conductors such as polythiophene, can betransparent or opaque, and can be provided in various widths, materials,and thicknesses. In general, stacked electronic components 90 can haveany number of electrodes 32. For applications such as a micro-assembledantenna 96, stacked electronic components 90 can have one or twoelectrodes 32. For applications such as a micro-assembled capacitor 97,micro-assembled resistor 98, or micro-assembled inductor 99, stackedelectronic components 90 can have two electrodes 32, for example onlytwo electrodes 32. For applications forming an active electronic circuit(e.g., a stacked integrated circuit), stacked electronic components 90can have more than two electrodes 32, for example three to tenelectrodes 32, and can include power, ground, and signal electrodes 32.FIG. 1H (in cross section) and 1I (in plan view) illustrate a stack 80of print layers 20 with bottom dielectric layers 22, functional layers24, patterned top dielectric layers 26, and exposed conductive portions25 (e.g., exposed conductive portions 25A and 25B) electricallyconnected with electrodes 32 (e.g., electrodes 32A, 32B) disposed oncomponent substrate 10 with component tether 18.

Coated electrodes 32A, 32B can be made in parallel usingphotolithography for a great number of stacked electronic components 90on a component source wafer 76 (e.g., as shown in FIG. 20) at the sametime and are therefore made more efficiently than other interconnectionmethods such as bond wires, which are sequentially connected by a bondwire machine. Coated electrodes 32A, 32B can also have a greaterconductivity and emit less electromagnetic radiation in operation thanbond wires, since they can be thicker, curve less, and do not extendaway from print layers 20 or component substrate 10 (e.g., into theair). Coated electrodes 32A, 32B can also have smaller dimensions thanbond wires, for example having a width or thickness no greater than 25microns, no greater than 20 microns, no greater than 15 microns, nogreater than 10 microns, no greater than 5 microns, or no greater than 2microns. In some embodiments, exposed conductive portions 25A, 25B ofprint layers 20 are electrically connected exclusively by patternedelectrode layer 30 (e.g., by electrodes 32A, 32B) and are notelectrically connected by bond wires. In some embodiments, exposedconductive portions 25 of print layers 20 can have an exposed length orwidth in a horizontal direction H that is less than 25 microns, lessthan 20 microns, less than 15 microns, less than 12 microns, or lessthan 10 microns. Such small exposed conductive portions 25 can be toosmall to electrically connect with bond wires but are readilyelectrically connected with electrodes 32. Moreover, embodiments of thepresent disclosure enable electrical connections between different printlayers 20 in stack 80 without the use of expensive and complexthrough-silicon vias or through-substrate vias (e.g., vias throughdielectric layer 22), reducing costs and enhancing manufacturability ofstacked electronic components 90 of the present disclosure.

As shown in FIG. 20, stacked electronic component 90 can be constructedon a component substrate 10 of a component source wafer 76 withsacrificial portions 72 laterally separated by anchors 74 and a stackedelectronic component 90 disposed exclusively, directly, and completelyover each sacrificial portion 72, connected to anchor 74 with componenttether 18, and transfer printed to a target substrate 50 (shown in FIG.15 discussed below) using a stamp to adhere stacked electronic component90 to the stamp, removing the stamp with stacked electronic component 90and fracturing component tether 18, and printing stacked electroniccomponent 90 to target substrate 50. Once stacked electronic component90 is disposed on its final substrate (e.g., formed in place oncomponent substrate 10, formed in place on target substrate 50, ortransfer printed from component source wafer 76 to target substrate 50),it can be electrically interconnected to any electronic circuit or wireson final target substrate 50, for example with metal wires constructedusing photolithographic methods and materials. In some embodiments, theelectrical connection of stacked electronic component 90 to any externalcircuits or electrical connections is done in a common step withdisposing electrode layer 30 and patterning electrodes 32A, 32B,reducing photolithographic processing steps and costs for the finalelectronic system.

Component substrate 10 or a final target substrate 50 can be a glass orpolymer substrate or, in some embodiments, an unpackaged semiconductordie, for example a portion of an integrated circuit and for example partof a semiconductor wafer having a surface on which print layers 20 canbe disposed, e.g., transfer printed. In some embodiments, componentsubstrate 10 or a final target substrate 50 is a module substrate onwhich an unpackaged integrated circuit or semiconductor die is disposed.Such integrated circuits can be, but are not limited to, siliconcircuits, such as CMOS, or compound semiconductor circuits formed indoped or undoped compound semiconductors such as GaN, GaAs, InP andcomprising light-emitting diodes, high-power or high-electronic mobilitytransistors, micro-electromechanical device, and sensors. Componentsubstrate 10 or final target substrate 50 can be, but is not limited to,glass, plastic, semiconductor, compound semiconductor, or ceramic.Generally, component substrate 10 or target substrate 50 can be anysubstrate on which print layers 20 and electrode layer 30 can bedisposed, for example a semiconductor substrate or a glass or plasticsubstrate as found in the display or integrated circuit industries.Component substrate 10 can be rigid or flexible as well as transparentor opaque.

In the FIGS. 1A-1I illustrations, stacked electronic component 90 andprint layers 20 are substantially rectangular (excluding any print-layertethers 28 or component tethers 18) and exposed conductive portions 25are disposed on opposing sides (opposing edges) of the rectangle. Moregenerally, stacked electronic component 90 and print layers 20 can haveany shape in horizontal direction H over component substrate 10 ortarget substrate 50, for example polygonal shapes. Exposed conductiveportions 25 can be disposed on opposing sides (opposing edges) of aperimeter of the polygon. As shown in the embodiments of FIGS. 2A-2E,stacked electronic component 90 and print layers 20 are substantiallyrectangular and exposed conductive portions 25 are each disposed onthree sides of the rectangle, extending completely over opposing sidesand less than halfway on the other sides to enable exclusive electricalconnection to different electrodes 32. (As used herein, when referringto a vertical direction D, a side of print layer 24 is a surface ofprint layer 24, when referring to a shape of print layer 24 orhorizontal direction H, a side of print layer 24 is an edge or portionof a perimeter of print layer 24 in a horizontal plane.)

The different shapes of exposed conductive portions 25 can be defined byappropriately patterning top dielectric layer 26 or by patterningfunctional layer 24. FIGS. 2A-2D illustrate print layers 20 similar tothose of FIGS. 1A-1D except with a differently patterned top dielectriclayer 26 disposed over functional layer 24 on bottom dielectric layer22. FIG. 2E illustrates a stack 80 of print layers 20 with bottomdielectric layers 22, functional layers 24, patterned top dielectriclayers 26, and exposed conductive portions 25 (e.g., 25A and 25B)electrically connected with electrodes 32 (e.g., electrodes 32A, 32B)disposed on component substrate 10 with component tether 18. In someembodiments and as illustrated in FIGS. 4A-4F discussed further below,exposed conductive portions 25 can all be disposed on a common side(common edge) of stacked electronic component 90 and a common side ofall of print layers 20. As with the embodiments of FIGS. 2A-2E, this canbe achieved by appropriately patterning top dielectric layer 26.

By appropriately patterning top dielectric layer 26 to expose desiredportions of functional layer 24 (e.g., exposed conductive portions 25),exposed conductive portions 25 (e.g., exposed conductive portions 25A,25B) can be spatially located over component substrate 10 and in stackedelectronic component 90 to enable a simple pattern at low resolution forelectrodes 32 electrically connecting exposed conductive portions 25Aand 25B corresponding to electrodes 32A and electrode 32B, respectively.Moreover, larger or more extensive exposed conductive portions 25 canincrease an electrical connection area to functional layer 24. Suchsimple electrode 32 shapes (e.g., rectangles) improve current flow,reduce electromagnetic radiation, and reduce resolution requirements forthe masks needed to pattern electrodes 32. Such spatial locations can beachieved by disposing none of exposed conductive portions 25electrically connected to a first electrode 32 spatially between exposedconductive portions 25 electrically connected to a different secondelectrode 32 in horizontal direction H (e.g., a direction orthogonal tostack direction D and parallel to a surface of component substrate 10).For example, and as shown in FIGS. 1H and 1I and in FIG. 2E, exposedconductive portions 25A are electrically connected to electrode 32A andexposed conductive portions 25B are electrically connected to electrode32B. None of exposed conductive portions 25A are spatially located inhorizontal direction H between any of exposed conductive portions 25B.Likewise, none of exposed conductive portions 25B are spatially locatedin a horizontal direction between any of exposed conductive portions25A.

In embodiments in which electrodes 32 have more complex shapes, exposedconductive portions 25A electrically connected by electrodes 32A can bedisposed spatially in horizontal direction H between exposed conductiveportions 25B electrically connected by electrodes 32B.

In embodiments according to FIGS. 1A-1I and 2A-2E, a top dielectriclayer 26 is disposed over functional layer 24 in each print layer 20.Top dielectric layer 26 provides environmental protection to functionallayer 24 but require an extra deposition and patterning step. In someembodiments, print layers 20 do not comprise a top dielectric layer 26.As shown in the embodiments of FIGS. 3A-3D, different-area print layers20 each comprise a dielectric layer 22 with a functional layer 24patterned on dielectric layer 22. Different-area print layers 20 aredisposed in stack 80 on component substrate 10, for example bymicro-transfer printing, as shown in the FIG. 3E plan view and FIG. 3Fcross section with exposed conductive portion 25 of functional layer 24in each print layer 20 exposed around or adjacent to the perimeter ofeach print layer 20. An unpatterned insulating layer 40, such as anuncured resin, adhesive, or photoresist, can be coated over stack 80 ofprint layers 20, as shown in FIG. 3G, and then patterned (for exampleusing photolithographic patterning methods and materials) to form apatterned insulating layer 42 with vias 44 exposing exposed conductiveportion 25 of each print layer 20, as shown in FIG. 3H. An unpatternedelectrode layer 30 is then disposed over patterned insulating layer 42,vias 44, and exposed conductive portions 25, as shown in FIG. 3I, andpatterned (for example using photolithographic methods and materials) toform electrodes 32A and 32B, as shown in FIGS. 3J and 3K. Thus, someembodiments of the present disclosure comprise a stacked electroniccomponent 90 comprising a patterned insulating layer 42 disposed overstack 80 of print layers 20, vias 44 formed in patterned insulatinglayer 42, and one or more electrodes 32 electrically connected toexposed conductive portions 25 through vias 44.

As shown in FIGS. 4A-4F and according to some embodiments of the presentdisclosure, exposed conductive portions 25 can be arranged without theuse of a patterned insulating layer 42 as in FIGS. 3A-3K. FIGS. 4A-4Dillustrate different-area print layers 20 comprising a dielectric layer22 on each of which is patterned a functional layer 24. Functionallayers 24 and exposed conductive portions 25 of successive print layers20 in stack 80 are alternately offset on the surface of and with respectto dielectric layer 22. The different print layers 20 are transferprinted into a stack 80 and patterned with a conductor (e.g., a metal),as shown in FIGS. 4E and 4F, to form electrodes 32A and 32B in a stackedelectronic device 90. Dielectric layer 22 in each print layer 20 instack 80 covers functional layer 24 of a print layer 20 beneath it instack 80 except for the desired exposed conductive portion 25.Functional layers 24 offset with respect to dielectric layers 22 inprint layers 20 enable stacked electronic components 90 without topdielectric layers 26, reducing the number of deposition and patterningsteps necessary to construct stacked electronic components 90.

Any manufacturing process has resolution and alignment limitations.Transfer printing processes with large stamps and many print layers 20(e.g., ten to one hundred thousand print layers 20) can have a printaccuracy of 1-2 microns on target substrate 50 and in small transfers inoptimal conditions a print accuracy of less than one micron, for exampleseveral hundred nanometers. Since stack 80 can comprise many printlayers 20 and allowance must be made for the accuracy of each print stepin any practical manufacturing process, according to some embodiments ofthe present disclosure and as illustrated in FIGS. 5A-8, a stackedelectronic component 90 can comprise or be aligned with an alignmentstructure 12, for example disposed on component substrate 10 or targetsubstrate 50, that can assist in aligning print layers 20. As shown inFIGS. 5A-5D, different-area print layers 20 each comprise a functionallayer 24 patterned on a bottom dielectric layer 22 with an exposedconductive portion 25 (e.g., exposed conductive portions 25A, 25B)extending beyond patterned top dielectric layer 26. As shown in thecross section of FIG. 5E and cut-away plan view of FIG. 5F, print layers20 with successively smaller areas, each comprising bottom dielectriclayers 22, functional layers 24 on bottom dielectric layers 22, and topdielectric layers 26 on functional layers 24, are disposed in a stack 80adjacent to, aligned by, and/or in contact with alignment structure 12.Alignment structure 12 has a side adjacent to a corresponding side ofprint layers 20 so that print layers 20 are aligned in one dimensionalong a side of alignment structure 12. In some embodiments and as shownin FIG. 5F, print layers 20 aligned with alignment structure 12 haveexposed conductive portions 25 (e.g., exposed conductive portions 25A,25B) on a common side (or edge) of print layers 20 opposite alignmentstructure 12. Exposed conductive portions 25A electrically connected toelectrode 32A are on one half of the common side (edge) of print layers20 and exposed conductive portions 25B electrically connected toelectrode 32B are on the other half of the common side (edge) of printlayers 20. Such an arrangement enables a simple structure (e.g., arectangular structure) for electrodes 32.

In some embodiments and as shown in FIG. 6, exposed conductive portions25 can extend onto two sides (edges) of print layers 20. As shown inFIG. 7, exposed conductive portions 25A and 25B can be on opposing sides(edge) of print layers 20. FIG. 8 illustrates embodiments in which printlayers 20 are aligned in two dimensions adjacent to, aligned by, and/orin contact with alignment structure 12 (or multiple orthogonal alignmentstructures 12) with exposed conductive portions 25 on a common side(edge) of print layers 20. Although alignment structures 12 are shown assolid and continuous along print layer 20 edges, in some embodimentsalignment structures 12 extend only along a portion of print layer 20edges.

According to some embodiments of the present disclosure, print layers 20in stack 80 have successively smaller areas towards the top of stack 80opposite component substrate 10 or target substrate 50. Print layers 20can be arranged in a pyramid, so that edges on all sides of each printlayer 20 are exposed, for example as shown in FIGS. 1A-4F. In someembodiments, common edges are aligned, for example one edge of eachprint layer 20 each respective edge in a common plane orthogonal to asurface of print layers 20, as shown in FIGS. 5E-7, or two edges of eachprint layer 20 each respective edge in a common plane orthogonal to asurface of print layers 20, as shown in FIG. 8. In some embodiments, notshown in the Figures, more than two edges of print layers 20 arealigned, for example three edges of rectangular print layers.

In general, according to some embodiments of the present disclosure,there is no particular limitation on the arrangements or locations ofexposed conductive portions 25 of the different-area print layers 20, solong as an electrode 32 can electrically connect exposed conductiveportions 25 of a subset of print layers 20, e.g., an exclusive subset ofprint layers 20. Electrodes 32 can have a variety of shapes includingrectangles, curves, serpentine, and irregular configurations.

Embodiments of the present disclosure can enable a variety of stackedpassive electronic components 90, including micro-assembled capacitors97, micro-assembled resistors 98, micro-assembled inductors 99, andmicro-assembled antennas 96 (discussed further below), and print layers20 in each of these can have a variety of configurations. For example,as illustrated in FIG. 1A-8, functional layer 24 of each print layer 20can be a conductive plate in a micro-assembled capacitor 97. Asillustrated in FIGS. 9A-9C, print layers 20 can each be a verticalcapacitor. A vertical capacitor can comprise one or more wells (e.g.,holes, pits, or recesses) formed in dielectric layer 22, for example byetching with photolithographic methods and materials. A first functionallayer 24A is disposed on dielectric layer 22 and in the wells. Apatterned insulating layer 42 is disposed over first functional layer24A, leaving conductive portion 25A exposed. A second functional layer24B is disposed on patterned insulating layer 42 and in the wells and isoptionally coated with top dielectric layer 26, leaving conductiveportion 25B exposed. This vertical capacitor structure providesincreased capacitance to print layer 20.

FIGS. 1A-9C illustrate various configurations of a passive electronicmicro-assembled capacitor 97 comprising stacks 80 of print layers 20. Inthese configurations, print layers 20 form two exclusive subsets withtheir exposed conductive portions 25 that include all of print layers20. Each exclusive subset is electrically connected in parallel.According to some embodiments of the present disclosure and asillustrated in FIGS. 10A-11E, stacks 80 of print layers 20 form passivemicro-assembled resistors 98. FIGS. 10A-10E illustrate micro-assembledresistor 98 embodiments comprising top dielectric layer 26 and FIGS.11A-11E illustrate micro-assembled resistor 98 embodiments that do notcomprise top dielectric layer 26 (e.g., corresponding to micro-assembledcapacitors 97 of FIGS. 1A-1I and 3A-3K, respectively). As illustrated inFIGS. 10A-10D, print layers 20 each comprise bottom dielectric layer 22,functional layer 24 patterned on bottom dielectric layer 22, and topdielectric layer 26 patterned on functional layer 24, leaving exposedconductive portions 25. As illustrated in FIGS. 11A-11D, print layers 20each comprise dielectric layer 22 and functional layer 24 patterned ondielectric layer 22 leaving exposed conductive portions 25. In both setsof embodiments, functional layer 24 forms an extended resistiveelectrical conductor, for example in a serpentine shape or otherextended line and, for example, comprising polysilicon or ahigh-resistance metal or metal alloy. Exposed conductive portions 25A,25B are at either end of the resistive electrical conductor in eachprint layer 20. As shown in FIGS. 10E and 11E, exposed conductiveportion 25A of one print layer 20 is electrically connected to electrode32A and exposed conductive portion 25B of one print layer 20 iselectrically connected to electrode 32B. The remaining print layers 20are electrically connected in series by patterned functional-layerconnectors 34 to form a single, multi-layer micro-assembled resistor 98.

According to some embodiments of the present disclosure and asillustrated in FIGS. 12A-12F, a stacked electronic component 90 can beconstructed as a micro-assembled inductor 99. As shown in FIGS. 12-12D,different-area print layers 20 each have a patterned functional layer 24disposed on a bottom dielectric layer 22 and covered with an optionaltop dielectric layer 26. Functional layers 24 are each patterned to forma conductive line (wire) that extends substantially around and withinthe perimeter of dielectric layer 22, but the ends of the conductiveline in a print layer 20 are not electrically connected. FIG. 12Eillustrates a cut-away plan view showing the conductive lines offunctional layers 24 and FIG. 12F is a plan view showing the structurewith top dielectric layers 26 covering functional layers 24. As withmicro-assembled resistor 98, functional-layer connectors 34 seriallyelectrically connect exposed conductive portions 25 of adjacent printlayers 20 so that the conductive lines form a spiral of increasingheight (in this case with substantially rectangular sides correspondingto rectangular print layers 20). In some embodiments (not shown), eachfunctional layer 24 in each print layer 20 can comprise a spiral thatextends from an edge to a center and then, with additional metal layerspassing over print layer 20 spiral to an edge where it is connected withfunctional-layer connector 34. A spiral formed in each print layer 20can increase the inductance of micro-assembled inductor 99. Exposedconductive portions 25A, 25B at opposite ends of the spiral conductivelines electrically connected with functional-layer connectors 34 areelectrically connected with electrodes 32A, 32B to completemicro-assembled inductor 99.

In some embodiments, the same micro-assembled inductor 99 can be amicro-assembled antenna 96 and can be connected at both ends of seriallyconnected conductive functional layers 24 (e.g., by electrodes 32A, 32Bas shown in FIG. 12F), or at only one end of serially connectedfunctional layers 24 (e.g., by electrode 32A as shown in FIG. 12G).

Patterned functional-layer connectors 34 can be formed in a common stepwith common materials in a common layer (e.g., photolithographicallydefined metal layers) and are physically similar to electrodes 32.Electrodes 32 electrically connect exclusive subsets of print layers 20to external circuits that can use stacked electronic components 90.Patterned functional-layer connectors 34, in contrast, are electricalconnections between print layers 20 (e.g., between exposed conductiveportions 25 of different print layers 20) in stack 80 and are notexternally electrically connected. Because patterned functional-layerconnectors 34 and electrodes 32 can be formed together in a common layerdeposition and patterning process, they can be made efficiently and atrelatively low cost. Thus, in some embodiments, each electrode 32 iselectrically connected to an exposed conductive portion 25 of only oneprint layer 20 and, more generally, electrodes 32 electrically connectfewer than all of exposed conductive portions 25 of print layers 20.Moreover, in some embodiments, exposed conductive portions 25 of atleast two print layers 20 are electrically connected by one or morepatterned functional-layer connectors 34 that are electrically separatefrom one or more electrodes 32. Thus, functional-layer connectors 34 canelectrically connect functional layers 24 in series and eachfunctional-layer connector 34 can, but do not necessarily, directlyelectrically connect exposed conductive portions 25 of adjacent printlayers 20. In some embodiments and as shown in FIGS. 10A-12F, electrode32A is electrically connected to bottom print layer 20 (e.g., printlayer 20 with the largest area at the bottom of stack 80) and electrode32B is electrically connected to top print layer 20 (e.g., print layer20 with the smallest area at the top of stack 80).

Functional layer 24 can be patterned in a variety of patternscorresponding to the desired functionality of stacked electroniccomponent 90. For capacitive applications, each functional layer 24 canbe a plate such as a polygon having an area filled with low-resistanceconductive material, such as a metal, suitable for holding a charge andforming an electric or magnetic field between print layers 20. Forresistive applications, each functional layer 24 can be a serpentineline or wire comprising a resistive material, such as polysilicon or ahigh-resistance metal or electrical conductor, suitable for conductingelectrical current with a useful and defined resistance. Each end of theserpentine line can be disposed at an edge of dielectric layer 22 andelectrically connected with functional layer connectors 34. Formicro-assembled inductive or micro-assembled antenna 96 applications,each functional layer 24 can be a line or wire comprising alow-resistance conductive material, such as a metal, suitable forforming electrical or magnetic fields or responding to or formingelectromagnetic radiation. The lines can be disposed around theperimeter of dielectric layer 22 (e.g., a polygon) and form one or moreturns of a spiral in each print layer 20. In active circuits, functionallayer 24 can comprise a layer of epitaxy, e.g., a semiconductor, or asemiconductor substrate patterned to form the active circuit, e.g.,comprising transistors or diodes.

According to some embodiments of the present disclosure, print layers 20are disposed (e.g., micro-transfer printed) onto component substrate 10or onto another print layer 20 without an adhesive coated on componentsubstrate 10 or other print layer 20, for example as shown in FIGS.1A-12G. According to some embodiments and as illustrated in FIGS. 13-15,a layer of adhesive 60 can be disposed on component substrate 10 orprint layer 20 before print layer 20 is transferred thereon. Adhesive 60can be a resin, photoresist, an epoxy, or other adhesive, for example apolymer adhesive and can be curable, for example with heat or radiation,such as ultra-violet radiation. Adhesive 60 can be a non-conductiveadhesive 60. Adhesive 60 can be disposed as a patterned layer (forexample using an inkjet printer) or an unpatterned layer (for exampleusing spray, curtain, or spin coating). The layer of adhesive 60 can bevery thin, for example some nanometers or tens of nanometers thick, forexample 30 nm or 50 nm thick. Adhesive 60 can be patterned, for exampleusing photolithographic methods and materials.

FIG. 13 illustrates embodiments in which a layer of adhesive 60 isdisposed between a first print layer 20 and component substrate 10 (ortarget substrate 50) and between each print layer 20, for example byspray coating. Print layers 20 of FIG. 13 comprise both bottom and topdielectric layer 22, 26 so that adhesive 60 adheres bottom dielectriclayer 22 of a first print layer 20 to component substrate 10 (or targetsubstrate 50) and top dielectric layer 26 of first print layer 20 tobottom dielectric layer 22 of a second print layer 20 adhered to firstprint layer 20 in a stack 80.

FIG. 14 illustrates embodiments in which a layer of adhesive 60 isdisposed between a first print layer 20 and component substrate 10 andbetween each print layer 20. Print layers 20 of FIG. 14 comprise only asingle dielectric layer 22 (e.g., no top dielectric layer 26 is present)so that adhesive 60 adheres dielectric layer 22 of a first print layer20 to component substrate 10 and adheres functional layer 24 of firstprint layer 20 to dielectric layer 22 of an adjacent second print layer20 in a stack 80. In such embodiments, if the layer of adhesive 60 isnon-conductive, it can serve as top dielectric layer 26 for print layers20, so that functional layers 24 are protected with a dielectricprotection layer. Thus, adhesive 60 can be top dielectric layer 26 inprint layer 20. In any case, dielectric layer 22 of second print layer20 can protect functional layer 24 of first print layer 20, as secondprint layer 20 is disposed over first print layer 20.

In some embodiments, adhesive 60 can be sprayed over stack 80 after eachprint step for each print layer 20 without patterning. Adhesive 60 willaccumulate with each repeated spraying until the final print layer 20 isdisposed on the top of stack 80. The adhesive can then be cured, ifdesired, and exposed adhesive 60 removed. Thus, each print layer 20 instack 80 is adhered to an adjacent print layer 20 with a non-conductiveadhesive 60. Adhesive 60 removal can be a simple single unpatterned etch(e.g., a wet etch or dry etch, such as a plasma etch) that effectivelyremoves exposed adhesive 60, leaving adhesive 60 between print layers 20and component substrate 10 in place, and cleans exposed conductiveportions 25. After adhesive 60 is removed, electrode layer 30 materialcan be disposed, e.g., by evaporation or sputtering, in an unpatternedlayer and then patterned to form electrodes 32 using photolithographicpatterning methods and materials.

As shown in the illustration of FIG. 15, according to some embodimentsof the present disclosure, a stacked electronic component 90 cancomprise a component substrate 10. Print layers 20 are disposed (e.g.,by micro-transfer printing) in a stack 80 on component substrate 10.Component substrate 10, together with stack 80 of print layers 20 can bea micro-transfer printable component and comprise a component tether 18(e.g., micro-assembled on component source wafer 76 as shown in FIG.20). As shown in FIG. 15, component electrodes 36 can be disposed oncomponent substrate 10 and electrically connect to electrodes 32 ofstacked electronic component 90. Micro-assembled stacked electroniccomponent 90 can be transfer printed onto target substrate 50,fracturing or separating component tether 18. Stacked electroniccomponent 90 can be electrically connected to electrical devices orwires on target substrate 50.

In some embodiments of the present disclosure and as shown in FIG. 16A,component substrate 10 can comprise a component functional layer 14similar to functional layer 24 disposed on a component dielectric layer16. Component functional layer 14 can comprise a component exposedconductive portion 25 that is not covered with a dielectric layer 22 ofany of print layers 20 in stack 80. Thus, component substrate 10 canalso be a print layer 20 and can form bottom print layer 20 of stack 80so that component function layer 14 is also a functional layer 24 andcomponent dielectric layer 16 is also dielectric layer 22 in a printlayer 20. FIG. 16A illustrates a layer of adhesive 60 between printlayers 20 and component functional layer 14. FIG. 16B illustrates astack 80 of print layers 20 without layers of adhesive 60 on targetsubstrate 50. Electrodes 32 and component electrode 36 electricallyconnect the exposed conductive portions 25.

As noted with respect to FIG. 14, layers of adhesive 60 can be topdielectric layer 26. As shown in FIG. 16C, layers of adhesive 60 can bebottom dielectric layer 22. This can be useful in cases in whichfunctional layer 24 is an epitaxial or semiconductor substrate layerwith a top dielectric layer 26 disposed on the semiconductor substrate(functional layer 24). The semiconductor substrate and top dielectriclayer 26 can be transfer printed onto a layer of adhesive 60. Topdielectric layer 26 and the semiconductor substrate can be a mask for anotherwise unpatterned etch to remove adhesive 60 to expose conductiveportions 25. As shown in FIG. 16D, layers of adhesive 60 can be bottomdielectric layer 22 and top dielectric layer 26. Again, this arrangementcan be useful in cases in which functional layer 24 is an epitaxial orsemiconductor substrate layer. However, in these embodiments, anexternal mask is useful to pattern-wise remove adhesive 60 to exposeconductive portions 25 and leaving adhesive 60 remaining in place toprotect portions of functional layer 24 (e.g., semiconductor substrate)from undesired electrical connection to electrodes 32.

According to embodiments of the present disclosure, functional layers 24can comprise metals, such as copper or aluminum, or metal alloys, andcan have a thickness of 100 nm to 5 microns, for example 500 nm to onemicron. Dielectric layers 22 can have a thickness of one micron to 10microns, for example 2-5 microns and can be an inorganic dielectric,such as silicon dioxide or silicon nitride or can be an organicdielectric with a thickness less than one micron. Top dielectric layers26 can have a thickness less than the thickness of bottom dielectriclayers 22, for example having a thickness of one micron to 4 microns,and can be an inorganic dielectric, such as silicon dioxide or siliconnitride, or an organic dielectric, such as a polymer or adhesive with athickness less than one micron.

Embodiments of the present disclosure provide stacked electroniccomponents 90 with relatively large functional parameters constructedwith a simple manufacturing process and reduced resolution requirements.Electrodes 32 can be relatively thick, have good electricalconductivity, and can have a relatively low resolution. Patternedelectrode layer 30 (e.g., electrodes 32) can cover no less than 5%, 10%,20%, 50%, 70%, 80%, or 90% of an area of stacked electronic component90, providing excellent conductivity and thermal dissipation. Stackedelectronic components 90 can be micro-components, for example having anarea no greater than 40,000 μm² (e.g., 200 by 200 microns), no greaterthan 10,000 μm² (e.g., 100 by 100 microns), 2,500 μm² (e.g., 50 by 50microns), or 400 μm² (e.g., 20 by 20 microns). Since each print layer 20can be relatively thin (e.g., 1 micron, 2 microns, 5 microns, or 10microns), stack 80 can comprise 4 or more print layers 20, 8 or moreprint layers 20, 12 or more print layers 20, 15 or more print layers 20,20 or more print layers 20, or 50 or more print layers 20, and athickness of each print layer 20 can be no greater than 2 microns, nogreater than 5 microns, or no greater than 10 microns. A thickness ofstack 80 can be no greater than 10 microns, no greater than 15 microns,no greater than 20 microns, no greater than 50 microns, or no greaterthan 100 microns.

As shown in FIG. 17, according to the present disclosure, methods ofmaking a stacked electronic component 90 comprise providing one or moreprint-layer source wafers 70 comprising print layers 20 in step 100, forexample as shown in FIGS. 1A-1D and 19, and providing a component sourcesubstrate 76 (e.g., a component source wafer 76) in step 102 and asshown in FIG. 20. Print layers 20 on a print-layer source wafer 70 canhave a common area or have different areas as shown in FIGS. 1A-1D and19. Thus, a single print-layer source wafer 70 can be a single, commonprint-layer source wafer 70 for all print layers 20, or multipledifferent or same print-layer source wafers 70 can be used. Optionally,a layer of adhesive 60 is disposed on component source substrate 76 instep 106. A first print layer 20 is transfer printed from one ofprint-layer source wafers 70 onto component source substrate 76 in step110. Optionally, in step 115, adhesive 60 is disposed on first printlayer 20. In step 120, a second print layer 20 is transfer printed froma print-layer source wafer 70 (e.g., the same print-layer source wafer70 that provided first print layer 20 or a different print-layer sourcewafer 70) onto the first print layer 20 to form a stack 80 of printlayers 20. Second print layer 20 has a smaller area over componentsource substrate 76 than first print layer 20. In embodiments, secondprint layer 20 is completely and entirely disposed directly over firstprint layer 20 and does not extend over an edge of first print layer 20.Second print layer 20 can be a next print layer 20 and, if additionalprint layers 20 are desired in stack 80 (step 130), step 120 is repeatedwith a next print layer 20, optionally with adhesive in step 115, sothat next print layer 20 is disposed on the immediately previous printlayer 20 by transfer printing next print layer 20 from a print-layersource wafer 70 to the top of stack 80 of print layers 20. Thus, methodsof the present disclosure comprise successively transfer printing printlayers 20 having successively smaller areas from a print-layer sourcewafer 70 onto stack 80 to increase the number of print layers 20 instack 80.

Each functional layer 24 comprises an exposed conductive portion 25 thatis not covered with a dielectric layer 22 of any of print layers 20. Insome embodiments, print layers 20 on a print-layer source wafer 70 areoriented in a common direction but are rotated during the transferprinting process, e.g., by a stamp on a motion-control platform fortransfer printing, to orient print layers 20 in different directions,for example on different sides of stack 80, to locate exposed conductiveportions 25 on the different sides (edges) of stack 80, simplifying thepattern of electrodes 32.

Each print layer 20 comprises a dielectric layer 22 and a functionallayer 24 disposed on dielectric layer 22. Each functional layer 24comprises an exposed conductive portion 25 that is not covered with adielectric layer 22 of any print layers 20 in stack 80. Thus, secondprint layer 20 (e.g., next print layer 20) has a smaller area than thefirst print layer (e.g., print layers 20 beneath the next print layer 20in stack 80). Each exposed conductive portion 25 is spatially separatedfrom any other exposed conductive portion 25 in a direction orthogonalto stack 80, e.g., each exposed conductive portion 25 is horizontallyseparated by a spatial separation S in horizontal direction H from everyother exposed conductive portion 25. Spatial separation S can be zero sothat two exposed conductive portions 25 can abut or border on each otherbut cannot overlap, e.g., are nonoverlapping exposed conductive portions25.

After stack 80 of print layers 20 is completed, in optional step 135, asshown in FIGS. 1E and 1F, any adhesive 60, if present, is removed, e.g.,by exposure to an energetic plasma that can remove organic materialssuch as polymeric adhesives 60, thus clearing exposed conductiveportions 25. Electrode layer 30 (an electrical conductor) is depositedin step 140 as shown in FIG. 1G, for example by evaporation orsputtering a metal or other electrically conductive material as anunpatterned coating over stack 80. The electrode layer 30 is patternedin step 150 to form electrodes 32, for example by photolithographicmethods and materials. Stacked electronic component 90 is then complete,for example as shown in FIGS. 1H and 1I.

In some embodiments of the present disclosure, stack 80 of print layers20 (e.g., stacked electronic component 90) is disposed on a componentsubstrate 10, e.g., as shown in FIGS. 1E and 1F. In some embodiments,component substrate 10 is originally disposed on a component sourcewafer 76 (e.g., as shown in FIG. 20) and the entire stacked electroniccomponent 90 (e.g., comprising stack 80 of print layers 20 and componentsubstrate 10) is released from component source wafer 76 in step 160 andtransfer printed (e.g., micro-transfer printed with a stamp in a motionplatform) from component source wafer 76 to a target substrate 50provided in step 104 in step 170, for example as shown in FIGS. 15 and16B.

In some embodiments, component substrate 10 is a final substrate (e.g.,is also a target substrate 50) with other electrical components orcircuits disposed thereon to make a final electronic system for anapplication. As shown in FIG. 18, in some such embodiments, methods ofmaking a stacked electronic component 90 comprise providing one or moreprint-layer source wafers 70 comprising print layers 20 in step 100 andas shown in FIGS. 1A-1D, 19 and providing a target substrate 50 in step104. Optionally, a layer of adhesive 60 is disposed on target substrate50 in step 106. A first print layer 20 is transfer printed from one ofprint-layer source wafers 70 onto target substrate 50 in step 112.Optionally, in step 115, adhesive 60 is disposed on first print layer20. In step 120, a second print layer 20 is transfer printed from aprint-layer source wafer 70 (e.g., the same print-layer source wafer 70that provided first print layer 20 or a different print-layer sourcewafer 70) onto first print layer 20 to form a stack 80 of print layers20. Second print layer 20 has a smaller area over target substrate 50than first print layer 20. In embodiments, second print layer 20 iscompletely and entirely disposed directly over first print layer 20 anddoes not extend over an edge of first print layer 20. Second print layer20 can be a next print layer 20 and, if additional print layers 20 aredesired in stack 80 (step 130), step 120 is repeated with a next printlayer 20 so that next print layer 20 is disposed on the immediatelyprevious print layer 20 by transfer printing next print layer 20 from aprint-layer source wafer 70 to the top of stack 80 of print layers 20.Thus, methods of the present disclosure comprise successively transferprinting print layers 20 having successively smaller areas from aprint-layer source wafer 70 onto stack 80 to increase the number ofprint layers 20 in stack 80. Each functional layer 24 comprises anexposed conductive portion 25 that is not covered with a dielectriclayer 22 of any of print layers 20. In some embodiments, print layers 20on a print-layer source wafer 70 are oriented in a common direction butare rotated during the transfer printing process, e.g., by a stamp on amotion-control platform for transfer printing, to orient print layers 20in different directions, for example on different sides of stack 80, tolocate exposed conductive portions 25 on the different sides of stack80, simplifying the pattern of electrodes 32. Once all of print layers20 are disposed in stack 80 (step 130), in step 135 any adhesive 60, ifpresent, is removed, e.g., by exposure to an energetic plasma that canremove organic materials such as polymeric adhesives 60, thus clearingexposed conductive portions 25, for example as shown in FIG. 13.Electrode layer 30 (an electrical conductor) is deposited in step 140,for example by evaporation or sputtering a metal or other electricallyconductive material as an unpatterned coating over stack 80, for exampleas shown in FIG. 1G. Electrode layer 30 is patterned in step 150 to formelectrodes 32, for example by photolithographic methods and materials.Stacked electronic component 90 is then complete and disposed on targetsubstrate 50 and can be electrically interconnected with otherelectronic or opto-electronic components in a system.

In some methods of the present disclosure, stack 80 is coated withunpatterned insulating layer 40 and patterned to form vias 44 inpatterned insulating layer 42 that expose exposed conductive portions25. Some methods of the present disclosure comprise coating stack 80with an electrode layer 30 and patterning electrode layer 30 to defineone or more electrodes 32, each electrode 32 in electrical contact withan exclusive subset of exposed conductive portions 25. According to somemethods, patterning electrode layer 30 comprises formingfunctional-layer connectors 34 that each electrically connect exposedconductive portions 25 of at least two print layers 20 and areelectrically separate from electrodes 32 so that electrodes 32electrically connect fewer than all of exposed conductive portions 25.

In embodiments according to FIG. 21, dielectric layer 22 of print layers20 can have a rectangular shape with a tab extending from therectangular area and exposed conductive portion 25 (e.g., exposedconductive portions 25A, 25B) can be disposed on the tabs. Such anarrangement can simplify the structure of top dielectric layer 26 orelectrodes 32, particularly if unpatterned layers of adhesive 60 aredisposed, for example by spray coating. The tabs can provide a usefulmasking effect for material deposition.

Embodiments of the present disclosure describe passive stackedelectronic components 90 (e.g., micro-assembled capacitor 97,micro-assembled resistor 98, micro-assembled inductor 99, ormicro-assembled antenna 96) comprising stacks 80 of passive print layers20 for which the term electronic includes an electrical conductor usedin an electronic circuit or system and does not imply that stackedelectronic components 90 are active components, for example comprising atransistor.

According to some embodiments of the present disclosure and as shown inactive print layer 20 of FIG. 22, an active stacked electronic component95 comprises a stack 80 of active print layers 20. Each print layer 20in stack 80 has an area less than any print layers 20 beneath printlayer 20 in stack 80. Each print layer 20 comprises a dielectric layer22 and an epitaxial layer 23 (that is a functional layer 24) disposed onor in dielectric layer 22. Epitaxial layer 23 comprises an exposedconductive portion 25 that is not covered with a dielectric layer 22 ofany of active print layers 20, and each exposed conductive portion 25 isnonoverlapping with any other exposed conductive portion 25. Epitaxiallayer 23 can be a semiconductor substrate with a process surface and cancomprise an active circuit 29 formed in or on the process surface, forexample comprising transistors or diodes. A top dielectric layer 26 canbe disposed over epitaxial layer 23. Dielectric layer 22 can be a layerof adhesive 60 on which epitaxial layer 23 (e.g., a semiconductorsubstrate) is disposed (e.g., by micro-transfer printing a semiconductorsubstrate onto layer of adhesive 60) when functional layer 24 isepitaxial layer 23. A patterned electrode layer 30 is coated on at leasta portion of stack 80, patterned electrode layer 30 defining one or moreelectrodes 32. Each electrode 32 is in electrical contact with anexclusive subset of exposed conductive portions 25. In some embodiments,passive print layers 20 are interspersed between active print layers 20in stack 80, for example providing both active stacked electroniccomponents 90 and passive stacked electronic components 90 in a commonstack 80.

Active circuit 29 can comprise electronic circuitry, structures, andmaterials, for example electrical conductors, vias, doped semiconductorsformed using lithographic processes. The circuits can include insulatinglayers and structures such as silicon dioxide, nitride, and passivationlayers and functional layers or structures including wires or circuitelectrodes made of aluminum, titanium, silver, or gold that form anelectronic circuit. Useable methods and materials for making electroniccircuits are known in the integrated circuit arts.

In some embodiments of the present disclosure, active stacked electroniccomponents 95 comprise active print layers 20 (e.g., comprising anepitaxial layer 23 with active elements such as transistors) and passiveprint layers 20 (e.g., forming capacitor plates, resistor wires, orinductor wires). Moreover, a single stack 80 can comprise differenttypes of active or passive functional layers 24 and can make multipledifferent electronic components in the common stack 80. For example, ina single stack 80 some print layers 20 can provide resistors, some printlayers 20 can provide capacitors, and some print layers 20 can provideactive elements to form a functionally heterogeneous stacked electroniccomponent 90 electrically connected with functional-layer connectors 34.In general, functional-layer connectors 34 can connect any print layers20 in stack 80 in any order in series or in parallel to form the desiredstacked electrical component 90.

According to some embodiments of the present disclosure, and as shown inFIG. 23, target substrate 50 (or component substrate 10) is asemiconductor substrate with a target substrate active circuit 52 (orcomponent active circuit 52) and target substrate contact pads 56 formedin or disposed thereon and stacked electronic component 90 is disposedover target substrate active circuit 52 and electrically connected totarget substrate active circuit 52 with target substrate electrodes 54(e.g., corresponding to component electrodes 36) and target substratecontact pads 56, to form a three-dimensional integrated circuit. Thisstructure enables an efficient and highly integrated electronic systemincorporating active and passive electronic components.

The use of transfer printing (e.g., micro-transfer printing) reducesconstruction costs. If print layers 20 are serially constructed usingphotolithography to form stack 80, the materials in each print layer 20must be successively deposited and patterned, relatively slowly and atsignificant expense. In contrast, forming all of print layers 20 onprint-layer source wafer 70 in a common step greatly reduces the amountof photolithographic processing necessary. Since the transfer printingsteps can be done massively in parallel (e.g., 10,000 to 100,000 printlayers 20 per transfer, where each transfer takes only a fraction of aminute), costs and processing time are much reduced.

Stacked electronic components 90 can be very small (e.g., having alength and a width no greater than 200 microns (for example, no greaterthan 100 microns, no greater than 50 microns, no greater than 20microns, or no greater than 10 microns) and a thickness no greater than50 microns (for example no greater than 30 microns, no greater than 20microns, no greater than 10 microns, or no greater than five microns).Each print layer 20 can be very thin, for example one micron, twomicrons, or five microns thick. Despite the small size, the functionalperformance of stack 80 of stacked electronic components 90 is increasedby an approximate multiple of the number of print layers 20 in stack 80.In certain embodiments, stacked electronic components 90 of the presentdisclosure can be micro-transfer printed. Micro-transfer printing cantransfer very small components (e.g., integrated circuit chiplets) froma source wafer to a target substrate 50. Other methods, such aspick-and-place or surface-mount techniques cannot transfer such smallstacked electronic components 90. Because the stacked electroniccomponents 90 are relatively small, they can be disposed directly on asemiconductor die or adjacent to an unpackaged semiconductor die. Thesemiconductor die can be, for example, an integrated circuit such as aCMOS circuit.

Target substrates 50 can be any suitable substrate on which anelectronic or opto-electronic circuit can be constructed or disposed andcan be a glass, polymer, ceramic, quartz, or semiconductor substrate.Target substrate 50 can be a semiconductor wafer and circuits can bedisposed on target substrate 50 by transfer printing or can be nativelyformed in situ, for example as CMOS, digital, mixed signal, or analogcircuits in an epitaxial layer of a semiconductor wafer. Electricaltarget substrate contact pads 56 and target substrate electrodes 54 canbe provided on target substrate 50 that are electrically connected toelectrodes 32 or component electrodes 36, for example byphotolithographic or printed circuit board methods and materials.

In some embodiments of the present disclosure, a component source wafer76 or print-layer source wafer 70 and sacrificial portion 72 includevarious materials. In some embodiments, component source wafer 76 orprint-layer source wafer 70 is anisotropically etchable (for examplesilicon {1 1 1}) and each sacrificial portion 72 is a designated portionof component source wafer 76 or print-layer source wafer 70. In someembodiments, each sacrificial portion 72 comprises sacrificial material(e.g., silicon dioxide) that is differentially etchable from componentsource wafer 76 or print-layer source wafer 70. In some embodiments,sacrificial portion 72 is etched forming a gap between print layer 20and print-layer source wafer 70 or between stack 80 and component sourcewafer 76 made by etching sacrificial portion 72, for example with a wetetchant such as TMAH or KOH.

According to various embodiments of the present invention, native sourcewafers can be provided with print layers 20, sacrificial portion 72,component substrates 10, and component tethers 18 or print-layer tethers28 already formed, or they can be constructed as part of a process inaccordance with some embodiments of the present invention.

Target substrates 50, print-layer source wafers 70 (print-layer sourcesubstrates), component source wafers 76, transfer-print stamps, andmotion control platforms for micro-transfer printing can be madeseparately and at different times or in different temporal orders orlocations and provided in various process states.

For a discussion of micro-transfer printing techniques applicable to(e.g., adaptable to or combinable with) methods disclosed herein seeU.S. Pat. Nos. 8,722,458, 7,622,367 and 8,506,867. Additional detailsuseful in understanding and performing aspects of the present disclosureare described in U.S. Patent Application Serial No. U.S. PatentApplication Ser. No. 62/148,603 filed Apr. 16, 2015, entitled MicroAssembled Micro LED Displays and Lighting Elements and in U.S. PatentApplication Ser. No. 62/055,472 filed Sep. 25, 2014, entitled CompoundMicro-Assembly Strategies and Devices, the disclosure of each of whichis hereby incorporated herein in its entirety by reference.

Tethers that are usable with, adaptable for use in, or combinable withtethers disclosed herein are discussed in U.S. Patent Publication No.2019/0385885 filed Jun. 14, 2018, entitled Multi-Layer Tethers forMicro-Transfer-Printing, and U.S. Pat. No. 10,714,374 filed May 9, 2019,entitled High-Precision Printed Structures, whose contents areincorporated herein by reference.

As is understood by those skilled in the art, the terms “over” and“under”, “above” and “below”, “top” and “bottom” are relative terms andcan be interchanged in reference to different orientations of thelayers, elements, and substrates included in the present invention. Forexample, a first layer on a second layer, in some implementations meansa first layer directly on and in contact with a second layer. In otherimplementations a first layer on a second layer includes a first layerand a second layer with another layer therebetween.

Throughout the description, where apparatus and systems are described ashaving, including, or comprising specific components, or where processesand methods are described as having, including, or comprising specificsteps, it is contemplated that, additionally, there are apparatus, andsystems of the disclosed technology that consist essentially of, orconsist of, the recited components, and that there are processes andmethods according to the disclosed technology that consist essentiallyof, or consist of, the recited processing steps.

It should be understood that the order of steps or order for performingcertain action is immaterial so long as operability is maintained.Moreover, two or more steps or actions in some circumstances can beconducted simultaneously.

Having expressly described certain embodiments, it will now becomeapparent to one of skill in the art that other embodiments incorporatingthe concepts of the disclosure may be used. Therefore, the claimedinvention should not be limited to the described embodiments, but rathershould be limited only by the spirit and scope of the following claims.

PARTS LIST

-   D stack direction/vertical direction-   H horizontal direction-   S spatial separation-   X x direction/x dimension-   Y y direction/Y dimension-   10 component substrate-   12 alignment structure-   14 component functional layer-   16 component dielectric layer-   18 component tether-   20 print layer-   22 dielectric layer/bottom dielectric layer/dielectric substrate-   23 epitaxial layer-   24, 24A, 24B functional layer-   25, 25A, 25B exposed conductive portion-   26 dielectric layer/top dielectric layer-   28 print-layer tether-   29 active circuit-   30 electrode layer-   32, 32A, 32B electrode-   34 functional-layer connector-   36 component electrode-   40 unpatterned insulating layer-   42 patterned insulating layer-   44 via-   50 target substrate-   52 target substrate active circuit/component active circuit-   54 target substrate electrode-   56 target substrate contact pad-   60 adhesive-   70 print-layer source wafer-   72 sacrificial portion-   74 anchor-   76 component source wafer/component source substrate-   80 stack-   90 stacked electronic component-   95 stacked active electronic component/micro-assembled integrated    circuit-   96 stacked passive electronic component/micro-assembled antenna-   97 stacked passive electronic component/micro-assembled capacitor-   98 stacked passive electronic component/micro-assembled resistor-   99 stacked passive electronic component/micro-assembled inductor-   100 provide print-layer source wafer step-   102 provide component source wafer step-   104 provide target substrate step-   106 optional pattern adhesive step-   110 print first layer onto component wafer step-   112 print first layer onto target substrate step-   115 optional apply adhesive step-   120 print next layer onto previous layer step-   130 all layers printed step-   135 optional pattern adhesive step-   140 deposit conductor step-   150 pattern electrodes step-   160 release component step-   170 print component step

1. A stacked electronic component, comprising: a stack of three or moreprint layers, each print layer in the stack of three or more printlayers having an area less than any of the print layers that are beneaththe print layer in the stack, wherein each of the print layers comprisesa dielectric layer and a functional layer disposed on the dielectriclayer, the functional layer comprises an exposed conductive portion thatis not covered with a dielectric layer of any of the print layers, andwherein the exposed conductive portion of each of the print layers isnonoverlapping with the exposed conductive portion of any other of theprint layers; and a patterned electrode layer coated on at least aportion of the stack, the patterned electrode layer defining one or moreelectrodes, each electrode of the one or more electrodes in electricalcontact with the exposed conductive portion of each of an exclusivesubset of the print layers.
 2. The stacked electronic component of claim1, wherein the stacked electronic component is a passive electroniccomponent.
 3. The stacked electronic component of claim 1, wherein thestacked electronic component is an active electronic component.
 4. Thestacked electronic component of claim 1, wherein the functional layer(i) is exclusively an electrical conductor, (ii) exclusively a resistiveelectrical conductor, (iii) comprises an epitaxial layer, or (iv) is anactive circuit.
 5. The stacked electronic component of claim 1, whereinthe stacked electronic component is a capacitor, a resistor, aninductor, or an antenna.
 6. The stacked electronic component of claim 1,wherein the print layer of each of the stack of three or more printlayers is electrically connected exclusively by the patterned electrodelayer.
 7. The stacked electronic component of claim 1, wherein the printlayer of each of the stack of three or more print layers is adhered toan adjacent print layer with a layer of adhesive.
 8. The stackedelectronic component of claim 7, wherein the dielectric layer is thelayer of adhesive.
 9. The stacked electronic component of claim 1,wherein the dielectric layer is a bottom dielectric layer and whereineach print layer of the stack of three or more print layers comprises atop dielectric layer disposed on the functional layer on a side of thefunctional layer opposite the bottom dielectric layer, the topdielectric layer covering the functional layer except for the exposedconductive portion.
 10. The stacked electronic component of claim 9,wherein the top dielectric layer is a layer of adhesive that adheresadjacent print layers of the stack of three or more print layerstogether.
 11. The stacked electronic component of claim 1, wherein (i)the patterned electrode layer defines only two electrodes, (ii) the oneor more electrodes electrically connect fewer than all of the exposedconductive portions, or (iii) both (i) and (ii).
 12. The stackedelectronic component of claim 1, wherein the exposed conductive portionsof at least two print layers of the stack of three or more print layersare electrically connected by one or more functional-layer connectorsthat are spatially and physically separate from the one or moreelectrodes.
 13. The stacked electronic component of claim 12, whereinthe one or more functional-layer connectors are disposed in a commonlayer or wherein the one or more functional-layer connectors aredisposed in a common layer with the one or more electrodes.
 14. Thestacked electronic component of claim 12, wherein the one or morefunctional-layer connectors electrically connect the functional layersin series or wherein the one or more functional-layer connectorselectrically connect the exposed conductive portions of adjacent printlayers of the stack of three or more print layers.
 15. The stackedelectronic component of claim 1, wherein the print layers of the stackof three or more print layers are shaped as a polygon and (i) all of theexposed conductive portions of the print layers are disposed on opposingsides of the polygon, (ii) each of the exposed conductive portions ofthe print layers is disposed on three sides of the polygon, (iii) eachof the exposed conductive portions of the print layers is disposed onone side of the polygon, or (iv) all of the exposed conductive portionsof the print layers are disposed on one side of the polygon.
 16. Thestacked electronic component of claim 1, wherein the print layers of thestack of three or more print layers are substantially rectangular orwherein the dielectric layer has a rectangular shape with an extendedtab and the exposed conductive portion is disposed on the tab.
 17. Thestacked electronic component of claim 1, wherein none of the exposedconductive portions electrically connected to a first electrode of theone or more electrodes are disposed spatially between the exposedconductive portions electrically connected to a second electrode of theone or more electrodes different from the first electrode in a directionorthogonal to the stack.
 18. The stacked electronic component of claim1, wherein each functional layer in the stack is a passive electricalconductor that is a plate, a serpentine conductor, or a conductor withinand close to at least most of a perimeter of a polygon.
 19. The stackedelectronic component of claim 1, comprising an insulating layer disposedover the stack of three or more print layers and vias formed in theinsulating layer, wherein the one or more electrodes are electricallyconnected to the exposed conductive portions through the vias.
 20. Thestacked electronic component of claim 1, comprising an alignmentstructure, wherein the print layers of the stack of three or more printlayers are one or more of adjacent to, aligned by, and in contact withthe alignment structure.
 21. The stacked electronic component of claim20, wherein the alignment structure aligns the stack in two dimensions.22. The stacked electronic component of claim 1, wherein the functionallayer of one or more print layers of the stack of three or more printlayers is a vertical capacitor layer.
 23. The stacked electroniccomponent of claim 1, comprising a component substrate comprising acomponent print layer, the component print layer comprising a componentdielectric layer and a component functional layer disposed on thecomponent dielectric layer, the component functional layer comprising acomponent substrate exposed conductive portion that is not covered witha dielectric layer of any of the print layers, and an electrode of theone or more electrodes is in electrical contact with the componentsubstrate exposed conductive portion.
 24. The stacked electroniccomponent of claim 1, wherein each print layer of the stack of three ormore print layers comprises a broken or separated tether. 25-36.(canceled)